ON Semi Announces New SiC Based Power Components Ahead of PCIM 2019
Leading up to the PCIM 2019, the most widely known global exhibition for power electronics, ON Semi has announced a new SiC-based hybrid insulated-gate bipolar transistor (IGBT) and Gate Drivers Series. Here are details about these power components and how they relate to bringing efficiency to the semiconductor industry.
New Power Components
The AFGHL50T65SQDC as a silicon-based hybrid IGBT, is built with a (SiC) Schottky barrier diode. IGBT drivers within the NCD(V)57000 series are designed to handle high-current. The AFGHL50T65SQDC is rated for 650 V operation with the capability of handling continuous currents up to 100A @ 25 degrees Celsius. It can also handle pulsed currents up top 200A. Systems that require more current capacity should focus on a positive temperature coefficient to simplify parallel operation.
One of the advantages to these hybrids is that they help balance out differences between low performance of silicon-based solutions and the more expensive SiC-based power components. These hybrids provide performance benefits such as low conduction and switching losses. Totem pole-based bridgeless power factor correction (PFC) devices and inverters fit this description, as emphasized by ON Semi.
Another group of high-current single channel IGBT drivers includes the NCD(V)57000 series. Key parameters of this series include the ability to handle high current with low output impedance for enhanced IGBT driving, along with short propagation delays with accurate matching.
The AFGHL50T65SQDC appears in automotive applications since some EVs both provide as well as receive power. It's essentially a bi-directional charger acting as an IGBT with an external SiC diode. This efficient and convenient solution, unlike a MOSFET solution, has no forward or reverse recovery losses.
ON Semi has pointed out that the component is suitable for automotive power systems, DC-DC converters, industrial inverters and power factor correction (PFC). Features that make the device favored by automotive manufacturers include its high current capability, low saturation voltage and fast switching.